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| AO4425 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4425 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO4425 is Pb-free (meets ROHS & Sony 259 specifications). AO4425L is a Green Product ordering option. AO4425 and AO4425L are electrically identical. Features VDS (V) = -38V ID = -14A (VGS = -20V) RDS(ON) < 10m (VGS = -20V) RDS(ON) < 11m (VGS = -10V) ESD Rating: 4000V HBM SOIC-8 Top View S S S G D D D D D G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -38 25 -14 -11 -50 3.1 2 -55 to 150 Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Typ 26 50 14 Max 40 75 24 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO4425 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-30V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=0V, VGS=25V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-20V, I D=-14A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-10V, I D=-14A Forward Transconductance VDS=-5V, ID=-14A IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C -2 -50 7.7 11 8.8 43 0.71 1 4.2 3800 VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 560 350 7.5 63 VGS=-10V, VDS=-20V, I D=-14A 14.1 16.1 12.4 VGS=-10V, VDS=-20V, RL=1.35, RGEN=3 IF=-14A, dI/dt=100A/s IF=-14A, dI/dt=100A/s 9.2 97.5 45.5 35 33 10 13.5 11 -2.5 Min -38 -100 -500 1 10 -3.5 Typ Max Units V nA A A V A m m S V A pF pF pF nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. -15 C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. -12.8 D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 1 : July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4425 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 20 -ID (A) 15 10 5 VGS=-3V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics -4V -3.5V -20V -10V -5V -4.5V -ID(A) 30 25 20 15 10 5 0 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 1.6 Normalized On-Resistance VGS=-10V ID = -14A 125C 25C VDS=-5V 10 9 RDS(ON) (m) VGS=-10V 1.4 8 VGS=-20V 1.2 VGS=-20V ID = -14A 7 1 6 0 5 10 15 20 25 30 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 20 ID=-14A -12.8 -15 1.0E+01 1.0E+00 1.0E-01 125C RDS(ON) (m) 15 125C -IS (A) 1.0E-02 1.0E-03 1.0E-04 10 25C 25C 1.0E-05 5 4 8 12 16 20 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AO4425 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=-15V ID=-14A Capacitance (pF) 5000 Ciss 8 -VGS (Volts) 4000 6 3000 4 2000 Coss Crss 0 2 1000 0 0 10 30 40 50 60 -Qg (nC) Figure 7: Gate-Charge Characteristics 20 70 0 20 30 -VDS (Volts) Figure 8: Capacitance Characteristics 10 40 100.0 RDS(ON) limited 10.0 -ID (Amps) 10s 100s 1ms 10ms 0.1s 1s TJ(Max)=150C TA=25C 10s DC 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 Power (W) 40 TJ(Max)=150C TA=25C 30 20 1.0 10 0.1 0.1 0 0.001 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 0.01 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W 1 -15 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse -12.8 PD Ton Single Pulse 0.1 T 0.01 0.00001 0.0001 0.001 0.01 1 10 Pulse 0.1 Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 100 1000 Alpha & Omega Semiconductor, Ltd. |
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